2000 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com sensitron semiconductor technical data data sheet 913, rev. b hermetic power schottky rectifier very low forward voltage drop ultra low reverse leakage applications: switching power supply co nverters free - wheeling diodes polarity protection diode features: ultra low reverse leakage current soft reverse recovery at low and high temperature very low forward voltage drop low power loss, high efficiency high surge capacity guard ring for enhanced durability and long term reliability guaranteed reverse avalanche characteristics maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 200 v max. average forward current i f(av) 50% duty cycle, rectangular wav e form (per leg) 7.5 a max. peak one cycle non - repetitive surge current i fsm 8.3 ms, half sine wave (per leg) 140 a non - repetitive avalanche energy e as t j = 25 c, i as = 0.4 a, l = 40mh 7.7 mj repetitive avalanche current i ar i as decay linearly to 0 in 1 s limited by t j max v a =1.5v r 0.4 a maximum thermal resistance r jc - 3.2 c/w max. junction temperature t j - - 65 to +200 c max. storage temperature t stg - - 65 to +200 c electrical characteristics: characteristics symbol condition max. units max. forward voltage drop v f1 @ 7.5a, pulse, t j = 25 c 0.92 v (per leg) v f2 @ 7.5a, pulse, t j = 125 c 0.76 v max. reverse current i r1 @v r = 200v, pulse, t j = 25 c 0.0 5 ma (per leg) i r2 @v r = 200v, pulse, t j = 125 c 0.5 ma max. junction capacitan ce (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz, v sig = 50mv (p - p) 150 pf max. reverse recovery time t rr i f = 0.5 a, i r = 1.0 a, i rm = 0.25 a, t j = 25 c 25 nsec SHD118136 SHD118136b
2000 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com sensitron data sheet 913, rev. b mechanical dimension s: in inches / mm 1 2 3 common cathode pinout table device type pin 1 pin 2 pin 3 dual rectifier, common cathode (p) common cathode anode anode SHD118136 SHD118136b shd - 5 shd - 5a shd - 5b shd - 5 0.0 0.2 0.4 0.6 0.8 1.0 forward voltage drop - v f (v) 10 -3 10 -2 10 -1 10 0 10 1 instantaneous forward current - i f (a) typical forward characteristics 125 c 200 c 175 c 25 c 0 40 80 120 160 200 240 reverse voltage - v r (v) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 instantaneous reverse current - i r (ma) typical reverse characteristics 25 c 50 c 75 c 100 c 125 c 150 c 200 c 175 c 0 40 80 120 160 200 240 reverse voltage - v r (v) 0 40 80 120 junction capacitance - c t (pf) typical junction capacitance 2 3 .370.010 (9.40.254) .610.010 (15.5.254) .090.010 (2.29.254) .130 (3.30) max alumina ring .520.020 (13.2.508) .320.010 (8.13 .254) .030.010 (.762.254) moly lid moly base terminal 1 .060.010 (1.52.254) .015.002 (.381.051) .020.005 r (.508.127 ) copper terminals .370.010 (9.40.254) 2 3 .610.010 (15.5.254) .030.010 (.762.254) .110 (2.80) max alumina ring terminal 1
2000 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com sensitron data sheet 913, rev. b SHD118136 SHD118136b disclaimer: 1 - the information given herein, including the specifications and dimensions, is subject to change without prior notice to impro ve product characteristics. before ordering, purchasers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2 - in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipmen t , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means o f users fail - safe precautions or other arrangement . 3 - in no event shall sensitron semiconductor be liable for any damages that m ay result from an accident or any other cause during operation of the users units according to the datasheet(s). sensitron semiconductor assumes no responsibility for any intellectual proper ty claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4 - in no event shall sensitron semiconductor be liable for any failure in a semiconductor device or any secondary damage resulti ng from use at a value exceeding the absolute maximum rating . 5 - no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6 - the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissi on of sensitron semiconductor. 7 - the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applicat ion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulat ions.
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